Vertical alignment of liquid crystal through ion beam exposure on oxygen-doped SiC films deposited at room temperature

Journal Article · Mon Sep 03 04:00:00 EDT 2007 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2783182· OSTI ID:21016136

Son, Phil Kook; Park, Jeung Hun; Kim, Jae Chang; Yoon, Tae-Hoon; Rho, Soon Joon; Jeon, Back Kyun; Shin, Sung Tae; Kim, Jang Sub; Lim, Soon Kwon ^[1]

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1. School of Electrical Engineering, Pusan National University, Busan 609-735 (Korea, Republic of)

The authors report the vertical alignment of liquid crystal (LC) through the ion beam exposure on amorphous oxygen-doped SiC (SiOC) film surfaces deposited at room temperature. The optical transmittance of these films was similar to that of polyimide layers, but much higher than that of SiO{sub x} films. The light leakage of a LC cell aligned vertically on SiOC films was much lower than those of a LC cell aligned on polyimide layers or other inorganic films. They found that LC molecules align vertically on ion beam treated SiOC film when the roughness of the electrostatic force microscopy (EFM) data is high on the SiOC film surface, while they align homogeneously when the roughness of the EFM data is low.

• OSTI ID: 21016136
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 10 Vol. 91; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
DOPED MATERIALS
ION BEAMS
LAYERS
LIQUID CRYSTALS
MICROSCOPY
OXYGEN
ROUGHNESS
SILICON CARBIDES
SILICON OXIDES
TEMPERATURE RANGE 0273-0400 K
THIN FILMS
VISIBLE SPECTRA