Vertically aligned liquid crystals on a {gamma}-Al{sub 2}O{sub 3} alignment film using ion-beam irradiation

Journal Article · Mon Dec 08 04:00:00 EST 2008 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3046728· OSTI ID:21175809

Park, Hong-Gyu; Kim, Young-Hwan; Oh, Byeong-Yun; Lee, Won-Kyu; Kim, Byoung-Yong; Seo, Dae-Shik ^[1]; Hwang, Jeong-Yeon ^[2]

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1. Department of Electrical and Electronic Engineering, Information Display Device Laboratory, Yonsei University, 262 Seongsanno, Seodaemun-gu, Seoul 120-749 (Korea, Republic of)
2. Liquid Crystal Institute, Kent State University, Kent, Ohio 44242 (United States)

Using ion-beam (IB) irradiation, liquid crystals (LCs) were vertically aligned (VA) on a {gamma}-Al{sub 2}O{sub 3} alignment film. Atomic-layer deposition was used to orient the LCs on high-quality {gamma}-Al{sub 2}O{sub 3} alignment films. The LC molecule orientation indicates the vertical direction of the atomic-layer-deposited {gamma}-Al{sub 2}O{sub 3} alignment films. X-ray photoelectron spectroscopy showed that IB irradiation changed the chemical structure, shifting the Al-O binding energy and altering the Al-O bonding intensity. The low-voltage transmittance characteristics of the VA LC displays on the {gamma}-Al{sub 2}O{sub 3} alignment films were also measured, showing reduced voltage and power requirements.

• OSTI ID: 21175809
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 23 Vol. 93; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM OXIDES
BINDING ENERGY
CHEMICAL BONDS
DEPOSITION
ELECTRIC POTENTIAL
ION BEAMS
IRRADIATION
LAYERS
LIQUID CRYSTALS
THIN FILMS
X-RAY PHOTOELECTRON SPECTROSCOPY