Strong anisotropy of magnetization and sign reversion of ordinary Hall coefficient in single crystal Ge{sub 1-x}Mn{sub x} magnetic semiconductor films

Journal Article · Mon Aug 10 04:00:00 EDT 2009 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3206664· OSTI ID:21294236

Deng, J X; Tian, Y F; He, S M; Bai, H L; Xu, T S; Yan, S S; Dai, Y Y; Chen, Y X; Liu, G L; Mei, L M ^[1]

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1. School of Physics and State Key Laboratory of Crystal Materials, Shandong University, Jinan, Shandong 250100 (China)

Epitaxial single-crystal Ge{sub 1-x}Mn{sub x} ferromagnetic-semiconductor films were fabricated on Ge(001) substrates by molecular beam epitaxy. All the samples are ferromagnetic and have strong magnetic anisotropy indicated by different magnetization in plane and out of plane. The electrical transport of the films obeys Efros variable range hopping law in the low temperature range. Interestingly, a negative coefficient of the ordinary Hall effect of p-type carriers was found in the variable range hopping at low temperature. Anomalous Hall effect in Ge{sub 0.949}Mn{sub 0.051} film was observed below the Curie temperature, indicating the carrier-mediated intrinsic ferromagnetism.

• OSTI ID: 21294236
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 6 Vol. 95; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANISOTROPY
CRYSTAL GROWTH
CURIE POINT
FERROMAGNETIC MATERIALS
FERROMAGNETISM
GERMANIUM
GERMANIUM COMPOUNDS
HALL EFFECT
MAGNETIC SEMICONDUCTORS
MAGNETIZATION
MANGANESE COMPOUNDS
MOLECULAR BEAM EPITAXY
MONOCRYSTALS
SUBSTRATES
THIN FILMS