Effect of hydrogenation on transport and magnetic properties in homogeneous amorphous Mn{sub x}Ge{sub 1-x}:H films

Journal Article · Fri Apr 15 00:00:00 EDT 2011 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.3573781· OSTI ID:21560175

Yufeng, Qin; Shishen, Yan; Shuqin, Xiao; Qiang, Li; Zhengkun, Dai; Tingting, Shen; Shishou, Kang; Youyong, Dai; Guolei, Liu; Yanxue, Chen; Liangmo, Mei ^[1]

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1. School of Physics, and National Key Laboratory of Crystal Materials, Shandong University, Jinan, Shandong 250100 (China)

Homogeneous amorphous Mn{sub x}Ge{sub 1-x}:H films were synthesized under thermal nonequilibrium condition by magnetron co-sputtering technology with hydrogen in Ar atmosphere. Compared to the Mn{sub x}Ge{sub 1-x} films without hydrogen, the Mn{sub x}Ge{sub 1-x}:H films with hydrogen show higher concentration of hole carriers, larger conductivity, and higher saturation magnetization. Moreover, it was found that the anomalous Hall resistivity is proportional to the perpendicular magnetization. These electrical and magnetic properties indicate that the ferromagnetism of the Mn{sub x}Ge{sub 1-x}:H films is intrinsic ferromagnetism mediated by the spin-polarized hole carriers.

• OSTI ID: 21560175
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 8 Vol. 109; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
AMORPHOUS STATE
CARRIERS
CHEMICAL REACTIONS
DENSITY
DEPOSITION
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELECTRON TUBES
ELECTRONIC EQUIPMENT
ELEMENTS
EQUIPMENT
FERROMAGNETIC MATERIALS
FILMS
GERMANIUM COMPOUNDS
HALL EFFECT
HOLES
HYDROGEN
HYDROGENATION
MAGNETIC MATERIALS
MAGNETIC PROPERTIES
MAGNETIC SEMICONDUCTORS
MAGNETIZATION
MAGNETRONS
MANGANESE COMPOUNDS
MATERIALS
MICROWAVE EQUIPMENT
MICROWAVE TUBES
NONMETALS
ORIENTATION
PHYSICAL PROPERTIES
SATURATION
SEMICONDUCTOR MATERIALS
SPIN ORIENTATION
THIN FILMS
TRANSITION ELEMENT COMPOUNDS