Characterization of near-infrared n-type {beta}-FeSi{sub 2}/p-type Si heterojunction photodiodes at room temperature

Journal Article · Mon Jun 01 04:00:00 EDT 2009 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3151915· OSTI ID:21294134

Shaban, Mahmoud ^[1]; Nomoto, Keita; Izumi, Shota; Yoshitake, Tsuyoshi ^[1]

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1. Department of Applied Science for Electronics and Materials, Kyushu University, Kasuga, Fukuoka 816-8580 (Japan)

n-type {beta}-FeSi{sub 2}/p-type Si heterojunctions were fabricated from {beta}-FeSi{sub 2} films epitaxially grown on Si(111) by facing-target direct-current sputtering. Sharp film-substrate interfaces were confirmed by scanning electron microscopy. The current-voltage and photoresponse characteristics were measured at room temperature. They exhibited good rectifying properties and a change of approximately one order of magnitude in the current at a bias voltage of -1 V under illumination by a 6 mW, 1.31 {mu}m laser. The estimated detectivity was 1.5x10{sup 9} cm {radical}Hz W at 1.31 {mu}m. The results suggest that the {beta}-FeSi{sub 2}/Si heterojunctions can be used as near-infrared photodetectors that are compatible with silicon integrated circuits.

• OSTI ID: 21294134
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 22 Vol. 94; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
DEPOSITION
DIRECT CURRENT
ELECTRIC POTENTIAL
EPITAXY
HETEROJUNCTIONS
INTEGRATED CIRCUITS
IRON SILICIDES
PHOTODETECTORS
PHOTODIODES
SCANNING ELECTRON MICROSCOPY
SEMICONDUCTOR MATERIALS
SILICON
SPUTTERING
SUBSTRATES
TEMPERATURE RANGE 0273-0400 K
THIN FILMS