Near-infrared photodetectors utilizing MoS{sub 2}-based heterojunctions
Journal Article
·
· Journal of Applied Physics
- Department of Physics, Yonsei University, Seoul 120-749 (Korea, Republic of)
- ProteomeTech Inc., Seoul 120-749 (Korea, Republic of)
Near-infrared photodetectors are developed using graphene/MoS{sub 2} and WSe{sub 2}/MoS{sub 2} vertical heterojunctions. These heterojunctions exhibit diode-rectifying behavior in the dark and enhanced photocurrent upon near-infrared irradiation. The photocurrent increases with increasing near-infrared power, leading to the photoresponsibility of 0.14 and 0.3 A W{sup −1} for the graphene/MoS{sub 2} and WSe{sub 2}/MoS{sub 2} heterojunctions, respectively, which are much higher than the photoresponsibility reported for a multilayer MoS{sub 2} phototransistor.
- OSTI ID:
- 22499250
- Journal Information:
- Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 4 Vol. 118; ISSN JAPIAU; ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
Similar Records
MoS2 Heterojunctions by Thickness Modulation
Characterization of near-infrared n-type {beta}-FeSi{sub 2}/p-type Si heterojunction photodiodes at room temperature
Graphene/GaN diodes for ultraviolet and visible photodetectors
Journal Article
·
Mon Jun 29 20:00:00 EDT 2015
· Scientific Reports
·
OSTI ID:1256052
Characterization of near-infrared n-type {beta}-FeSi{sub 2}/p-type Si heterojunction photodiodes at room temperature
Journal Article
·
Mon Jun 01 00:00:00 EDT 2009
· Applied Physics Letters
·
OSTI ID:21294134
Graphene/GaN diodes for ultraviolet and visible photodetectors
Journal Article
·
Mon Aug 18 00:00:00 EDT 2014
· Applied Physics Letters
·
OSTI ID:22310903