A hybrid encapsulation method for organic electronics
- Center for Organic Photonics and Electronics and Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332 (United States)
- Center for Organic Photonics and Electronics and School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332 (United States)
We report a thin-film encapsulation method for organic electronics that combines the deposition of a layer of SiO{sub x} or SiN{sub x} (100 nm) by plasma enhanced chemical vapor deposition followed by a layer of Al{sub 2}O{sub 3} (10-50 nm) by atomic layer deposition and a 1-{mu}m-thick layer of parylene by chemical vapor deposition. The effective water vapor transmission rates of the encapsulation was (2{+-}1)x10{sup -5} g/m{sup 2} day at 20 deg. C and 50% relative humidity (RH). The encapsulation was integrated with pentacene/C{sub 60} solar cells, which showed no decrease in conversion efficiency after 5800 h of exposure to air demonstrating the effectiveness of the encapsulation methodology.
- OSTI ID:
- 21294052
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 16 Vol. 94; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
Similar Records
Enhancement of the barrier performance in organic/inorganic multilayer thin-film structures by annealing of the parylene layer
Cathode encapsulation of organic light emitting diodes by atomic layer deposited Al{sub 2}O{sub 3} films and Al{sub 2}O{sub 3}/a-SiN{sub x}:H stacks
Gas diffusion ultrabarriers on polymer substrates using Al{sub 2}O{sub 3} atomic layer deposition and SiN plasma-enhanced chemical vapor deposition
Journal Article
·
Wed Oct 15 00:00:00 EDT 2014
· Materials Research Bulletin
·
OSTI ID:22420575
Cathode encapsulation of organic light emitting diodes by atomic layer deposited Al{sub 2}O{sub 3} films and Al{sub 2}O{sub 3}/a-SiN{sub x}:H stacks
Journal Article
·
Sat Jan 14 23:00:00 EST 2012
· Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films
·
OSTI ID:22054139
Gas diffusion ultrabarriers on polymer substrates using Al{sub 2}O{sub 3} atomic layer deposition and SiN plasma-enhanced chemical vapor deposition
Journal Article
·
Wed Jul 15 00:00:00 EDT 2009
· Journal of Applied Physics
·
OSTI ID:21359324