Electrical properties of Zinc-Tin diarsenide (ZnSnAs{sub 2}) irradiated with H{sup +} ions
- Tomsk State University (Russian Federation)
The results of studying the electrical properties and isochronous annealing of p-ZnSnAs{sub 2} irradiated with H{sup +} ions (energy E = 5 MeV, dose D = 2 x 10{sup 16} cm{sup -2}) are reported. The limiting electrical characteristics of irradiated material (the Hall coefficient R{sub H} (D){sub lim} {approx} -4 x 10{sup 3} cm{sup 3} C{sup -1}, conductivity {sigma} (D){sub lim} {approx} 2.9 x 10{sup -2} {omega}{sup -1} cm{sup -1}, and the Fermi level position F{sub lim} {approx} 0.58 eV above the valence-band top at 300 K) are determined. The energy position of the 'neutral' point for the ZnSnAs{sub 2} compound is calculated.
- OSTI ID:
- 21260393
- Journal Information:
- Semiconductors, Journal Name: Semiconductors Journal Issue: 4 Vol. 43; ISSN SMICES; ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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