Electrical properties of proton-irradiated CdSnAs{sub 2}
- Tomsk State University (Russian Federation)
Electrical properties and isochronal annealing of proton-irradiated (5 MeV, 2 x 10{sup 16} cm{sup -2}) n-and p-type CdSnAs{sub 2} crystals have been studied. The limiting electrical parameters of the irradiated material were determined: Hall constant <R{sub H}> {approx} -1.2 cm{sup 3}/C, electrical conductivity <{sigma}> {approx} 1350 {omega}{sup -1} cm{sup -1}, Hall mobility < vertical bar R{sub H} vertical bar ><{sigma}> {approx} 1500 cm{sup 2}/(V s), and Fermi level position F{sub lim} {approx} 0.43-0.45 eV above the valence-band top. The energy position of the 'neutral' point for the CdSnAs{sub 2} compound was calculated.
- OSTI ID:
- 21087943
- Journal Information:
- Semiconductors, Journal Name: Semiconductors Journal Issue: 1 Vol. 42; ISSN SMICES; ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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