The model of self-compensation and pinning of the Fermi level in irradiated semiconductors
- Federal Unitary Enterprise 'Karpov Scientific Research Institute of Physical Chemistry', Obninsk Branch (Russian Federation)
- Russian Academy of Sciences, Institute of Semiconductor Physics, Siberian Division (Russian Federation)
A model is developed to analyze numerically the electrical properties and the steady-state (limiting) position of the Fermi level (F{sub lim}) in tetrahedral semiconductors irradiated with high-energy particles. It is shown that an irradiated semiconductor represents a highly compensated material, in which F{sub lim} is identical to <E{sub G}>/2, where <E{sub G}> is the average energy gap between the conduction band and valence band within the entire Brillouin zone of the crystal. The experimental values of F{sub lim}, the calculated values of <E{sub G}>/2, and the data on the electrical properties of irradiated semiconductors are presented. The chemical trends controlling the variation in the quantity F{sub lim} in groups of semiconductors with the similar types of chemical bonding are analyzed.
- OSTI ID:
- 21088006
- Journal Information:
- Semiconductors, Journal Name: Semiconductors Journal Issue: 9 Vol. 41; ISSN SMICES; ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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