Heat- and radiation-resistant contacts to SiC made on the basis of quasi-amorphous ZrB{sub 2} films
- National Academy of Sciences of Ukraine, Lashkarev Institute of Semiconductor Physics (Ukraine)
- State Scientific and Research Institute 'Orion' (Ukraine)
- National Academy of Sciences of Ukraine, Paton Institute of Electric Welding (Ukraine)
The radiation and thermal stability of the Schottky-barrier structures deposited by the magnetron sputtering of zirconium diboride onto the (0001) face of the Lely-grown n-6H(15R)SiC single crystals with the uncompensated-donor concentration of {approx}10{sup 18} cm{sup -3} was investigated by the methods of the I-V and C-V characteristics combined with the layer-by-layer Auger analysis. It is shown that the use of quasi-amorphous ZrB{sub 2} films when manufacturing contacts on n-6H(15R)SiC leads to no changes in the Schottky-barrier characteristics during rapid thermal annealing to 800 deg. C in the range of {sup 60}Co {gamma}-ray irradiation doses of 10{sup 3}-10{sup 7} Gy.
- OSTI ID:
- 21260352
- Journal Information:
- Semiconductors, Journal Name: Semiconductors Journal Issue: 6 Vol. 43; ISSN SMICES; ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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