Chemical vapor deposition of tungsten Schottky diodes to 6H-SiC

Journal Article · Wed May 01 04:00:00 EDT 1996 · Journal of the Electrochemical Society

DOI:https://doi.org/10.1149/1.1836695· OSTI ID:256822

Lundberg, N; Oestling, M ^[1]; Taegtstroem, P ^[2]

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1. Royal Inst. of Tech., Kista-Stockholm (Sweden). Dept. of Electronics
2. Uppsala Univ. (Sweden). Dept. of Chemistry

Thermally stable tungsten Schottky contacts to low doped 6H-silicon carbide (SiC) were fabricated via chemical vapor deposition at 670 K followed by a reactive ion etch to pattern the contacts. Physical characterization by X-ray diffraction, X-ray photoelectron spectroscopy, Rutherford backscattering spectrometry, and transmission electron microscopy verified a distinct W/6H-SiC interface after a 2 h vacuum anneal at 1073 K. Current-voltage (I-V) and capacitance-voltage (C-V) measurements were performed at temperatures ranging from 295 to 773 K and revealed a low n-type Schottky barrier {Phi}{sub Bn}{sup 295} = 0.79 eV, ideal for low ohmic applications and a high p-type Schottky barrier {Phi}{sub Bp}{sup 773} = 1.89 eV. At 473 K a current rectification ratio of 10{sup 7} at {+-}10 V was observed for the p-type contact.

• Sponsoring Organization: USDOE
• OSTI ID: 256822
• Journal Information: Journal of the Electrochemical Society, Journal Name: Journal of the Electrochemical Society Journal Issue: 5 Vol. 143; ISSN 0013-4651; ISSN JESOAN
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
42 ENGINEERING
CHEMICAL VAPOR DEPOSITION
ELECTRICAL PROPERTIES
ETCHING
FABRICATION
SCHOTTKY BARRIER DIODES
SILICON CARBIDES
TUNGSTEN
VAPOR DEPOSITED COATINGS