High temperature ohmic and Schottky contacts to N-type 6H-SiC nickel

Journal Article · Wed Jan 25 04:00:00 EST 1995 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.47277· OSTI ID:167046

Williams, J R; Bozack, M J; Isaacs-Smith, T; Luckowski, E D; Meadows, C ^[1]; Crofton, J; McMullin, P G ^[2]

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1. Physics Department, Auburn University, Alabama 36849 (United States)
2. WEC Science and Technology Center, 1310 Beulah Road, Pittsburgh, Pennsylvania 15235 (United States)

We report specific contact resistances measured at elevated temperatures for Ni ohmic contacts to 6H-SiC. The specific contact resistances were measured with the linear transmission line method at both room temperature and at 773 K and yielded values {lt}5{times}10{sup {minus}6} {Omega}-cm{sup 2} at both temperatures. The trend shows a {ital decreasing} contact resistance at higher temperatures. The annealed metal film is a nickel silicide with substantial mixing of C throughout the silicide layer. Also reported are the results of I-V and C-V barrier height measurements for Ni Schottky contacts to 6H-SiC. Current-voltage barrier heights as high as 1.2 eV have been measured, and the contacts show good electrical and physical stability following long-term anneals at 573 K in a vacuum ambient of 10{sup {minus}6} torr. These ohmic and Schottky contacts have been developed by the CCDS in collaboration with the Air Force and the Westinghouse Electric Corporation, and transfer of our contact technology to the Westinghouse Science and Technology is now complete. {copyright} 1995 {ital American} {ital Institute} {ital of} {ital Physics}

• Sponsoring Organization: USDOE
• OSTI ID: 167046
• Journal Information: AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 325; ISSN 0094-243X; ISSN APCPCS
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ELECTRIC CONDUCTIVITY
FILMS
N-TYPE CONDUCTORS
NICKEL SILICIDES
SEMICONDUCTOR DEVICES
SILICON CARBIDES
TECHNOLOGY TRANSFER
TEMPERATURE DEPENDENCE