Inductively Coupled Plasma Etching of III-V Semiconductors in BCl(3)-Based Chemistries: Part 1: GaAs, GaN, GaP, GaSb and AlGaAs

Journal Article · Fri Dec 04 04:00:00 EST 1998 · Applied Surface Science

OSTI ID:2126

Abernathy, C R ^[1]; Han, J; Hobson, W S; Hong, J; Lambers, E S; Lee, J W; Maeda, T; Pearton, S J; Shul, R J

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1. Sandia National Laboratories

BC13, with addition of Nz, Ar or Hz, is found to provide smooth anisotropic pattern transfer in GaAs, GaN, GaP, GaSb and AIGriAs under Inductively Coupled Plasma conditions, Maxima in the etch rates for these materials are observed at 33% N2 or 87$'40 Hz (by flow) addition to BC13, whereas Ar addition does not show this behavior. Maximum etch rates are typically much higher for GaAs, Gap, GaSb and AIGaAs (-1,2 @rein) than for GaN (-0.3 ymu'min) due to the higher bond energies of the iatter. The rates decrease at higher pressure, saturate with source power (ion flux) and tend to show maxima with chuck power (ion energy). The etched surfaces remain stoichiometric over abroad range of plasma conditions.

• Research Organization: Sandia National Laboratories, Albuquerque, NM, and Livermore, CA
• Sponsoring Organization: USDOE
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 2126
• Report Number(s): SAND98-2719J; ON: DE00002126
• Journal Information: Applied Surface Science, Journal Name: Applied Surface Science
• Country of Publication: United States
• Language: English

Related Subjects

40 CHEMISTRY
Etching
Plasma
Stoichiometry