Comparison of dry etching techniques for III-V semiconductors in CH{sub 4}/H{sub 2}/Ar plasmas
Journal Article
·
· Journal of the Electrochemical Society
- Univ. of Florida, Gainesville, FL (United States)
- AT and T Bell Labs., Murray Hill, NJ (United States)
- Sandia National Labs., Albuquerque, NM (United States)
Dry etching of III-V semiconductors under reactive ion etching, magnetron, or electron cyclotron resonance (ECR) conditions has been performed in the same reactor using the CH{sub 4}/H{sub 2}/Ar plasma chemistry. The use of ECR conditions with additional RF-biasing provides the fastest etch rates, although this produces rough surface morphologies for InP. Materials such as GaAs, AlGaAs, and GaP display smooth, stoichiometric surfaces even at the highest ECR powers employed. The etching is limited by sputter-induced desorption of the etch products for all of the III-Vs investigated.
- Research Organization:
- Sandia National Laboratory
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 212173
- Journal Information:
- Journal of the Electrochemical Society, Journal Name: Journal of the Electrochemical Society Journal Issue: 2 Vol. 143; ISSN 0013-4651; ISSN JESOAN
- Country of Publication:
- United States
- Language:
- English
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