Correlation of experimental damage data for the development of the UT-MARLOWE Monte Carlo ion implant simulator

Journal Article · Thu Jun 10 04:00:00 EDT 1999 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.59054· OSTI ID:21208065

Morris, M F ^[1]; Tian, S ^[2]; Chen, Y; Tasch, A ^[3]; Baumann, S ^[4]; Kirchhoff, J F ^[5]; Hummel, R ^[6]; Prussin, S ^[7]; Kamenitsa, D ^[8]; Jackson, J ^[9]

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1. Motorola, Mesa, Arizona 85202 (United States)
2. Avante, Fremont, California 94538 (United States)
3. Department of Electrical and Computer Engineering, University of Texas, Austin, Texas 78723 (United States)
4. Evans Texas, Round Rock, Texas 78681 (United States)
5. Charles Evans and Assoc., California 94603 (United States)
6. Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611 (United States)
7. Electrical Engineering Department, UCLA, Los Angeles, California, 90024 (United States)
8. Eaton Corporation, Austin, Texas 78717 (United States)
9. Eaton Corporation, Beverly, Massachusetts 01915 (United States)

The Monte Carlo ion implant simulator UT-MARLOWE has usually been verified using a large array of Secondary Ion Mass Spectroscopy (SIMS) data ({approx}200 profiles per ion species)(1). A model has recently been developed (1) to explicitly simulate defect production, diffusion, and their interactions during the picosecond 'defect production stage' of ion implantation. In order to thoroughly validate this model, both SIMS and various damage measurements were obtained (primarily channeling-Rutherford Backscattering Spectroscopy, Differential Reflectometry and Tapered Groove Profilometry, but supported with SEM and XTEM data). In general, the data from the various experimental techniques was consistent, and the Kinetic Accumulation Damage Model (KADM) was developed and validated using this data. This paper discusses the gathering of damage data in conjunction with SIMS in support of the development of an ion implantation simulator.

• OSTI ID: 21208065
• Journal Information: AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 475; ISSN APCPCS; ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
AMORPHOUS STATE
BUILDUP
CHANNELING
COMPUTERIZED SIMULATION
CORRELATIONS
CRYSTAL DEFECTS
DIFFUSION
ION IMPLANTATION
ION MICROPROBE ANALYSIS
MASS SPECTROSCOPY
MONTE CARLO METHOD
PHYSICAL RADIATION EFFECTS
RUTHERFORD BACKSCATTERING SPECTROSCOPY
SCANNING ELECTRON MICROSCOPY
SIMULATORS
SURFACES
U CODES