A detailed physical model for ion implant induced damage in silicon

Journal Article · Mon Jun 01 04:00:00 EDT 1998 · IEEE Transactions on Electron Devices

DOI:https://doi.org/10.1109/16.678523· OSTI ID:638390

Tian, S; Morris, M F; Morris, S J; Obradovic, B; Wang, G; Tasch, A F ^[1]; Snell, C M ^[2]

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1. Univ. of Texas, Austin, TX (United States). Microelectronics Research Center
2. Los Alamos National Lab., NM (United States)

A unified physically based ion implantation damage model has been developed which successfully predicts both the impurity profiles and the damage profiles for a wide range of implant conditions for arsenic, phosphorus, BF{sub 2}, and boron implants into single-crystal silicon. In addition, the amorphous layer thicknesses predicted by this new damage model are also in excellent agreement with experimental measurements. This damage model is based on the physics of point defects in silicon, and explicitly simulates the defect production, diffusion, and their interactions which include interstitial-vacancy recombination, clustering of same type of defects, defect-impurity complex formation, emission of mobile defects from clusters, and surface effects for the first time. New computationally efficient algorithms have been developed to overcome the barrier of the excessive computational requirements. In addition, the new model has been incorporated in the UT-MARLOWE ion implantation simulator, and has been developed primarily for use in engineering workstations. This damage model is the most physical model in the literature to date within the framework of the binary collision approximation (BCA), and provides the required, accurate as-implanted impurity profiles and damage profiles for transient enhanced diffusion (TED) simulation.

• OSTI ID: 638390
• Journal Information: IEEE Transactions on Electron Devices, Journal Name: IEEE Transactions on Electron Devices Journal Issue: 6 Vol. 45; ISSN 0018-9383; ISSN IETDAI
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CRYSTAL DEFECTS
ION IMPLANTATION
MATHEMATICAL MODELS
PHYSICAL RADIATION EFFECTS
SILICON