Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

Study of fluorocarbon plasma in 60 and 100 MHz capacitively coupled discharges using mass spectrometry

Journal Article · · Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films
DOI:https://doi.org/10.1116/1.2965812· OSTI ID:21192417
; ; ; ; ; ;  [1]
  1. Mechatronics and Manufacturing Technology Center, Samsung Electronics Co. Ltd., 416 Maetan-3 dong, Yeongtong-Gu, Suwon, Gyeonggi-Do 443-742 (Korea, Republic of)
The signals of positive ions and radicals formed in the fluorocarbon plasma of the capacitively coupled plasma reactor were measured using a quadrupole mass spectrometry and optical emission actinometry. The plasma was produced at 60 and 100 MHz frequencies for the same reactor configuration and gas mixtures. Experiments were performed at 25 mTorr with a SiO{sub 2} wafer on the grounded electrode. Mass spectra of ions were measured in C{sub 4}F{sub 8}/O{sub 2}/Ar and C{sub 4}F{sub 6}/O{sub 2}/Ar gas mixtures at 500-1500 W generator powers. For 60 and 100 MHz discharges production of fluorocarbon ions and radicals is discussed. It was found that the production of heavy species increases with frequency. The high mass signals such as C{sub 3}F{sub 3}{sup +}, C{sub 2}F{sub 4}{sup +}, C{sub 2}F{sub 5}{sup +}, C{sub 3}F{sub 5}{sup +}, C{sub 4}F{sub 7}{sup +} decrease when CHF{sub 3} is added to the gas mixture. However, the signals of CF{sub x}{sup +} (x=1,2,3) do not change significantly. These results are compared to the results of polymer film deposition on the wafer. It was suggested to control the polymerization film formation by adding small amount of CHF{sub 3} to the process mixture.
OSTI ID:
21192417
Journal Information:
Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films, Journal Name: Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films Journal Issue: 5 Vol. 26; ISSN 1553-1813
Country of Publication:
United States
Language:
English

Similar Records

Surface interactions of C{sub 3} radicals during the deposition of fluorocarbon and hydrocarbon films
Journal Article · Wed Nov 14 23:00:00 EST 2007 · Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films · OSTI ID:21020883

Vacuum beam studies of fluorocarbon radicals and argon ions on Si and SiO{sub 2} surfaces
Journal Article · Sun Oct 31 23:00:00 EST 2004 · Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films · OSTI ID:20636791

Chemical Reaction Mechanisms for Modeling the Fluorocarbon Plasma Etch of Silicon Oxide and Related Materials
Technical Report · Tue May 01 00:00:00 EDT 2001 · OSTI ID:782704