Vacuum beam studies of fluorocarbon radicals and argon ions on Si and SiO{sub 2} surfaces
Journal Article
·
· Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films
- Department of Chemical Engineering, University of California at Berkeley, 2016 Gilman Hall, Berkeley, California 94720 (United States)
Si and SiO{sub 2} were exposed to c-C{sub 4}F{sub 8} with and without Ar{sup +}, and to a mixture of characterized C{sub x}F{sub y} radical and stable species with and without Ar{sup +}. The mixture of C{sub x}F{sub y} radical and stable species was created from c-C{sub 4}F{sub 8} and Ar plasma and included CF, CF{sub 2}, CF{sub 3}, and various heavy C{sub x}F{sub y} species. The neutral fluorocarbon flux to Ar{sup +} flux and the energy of the Ar{sup +} were varied. During the exposure, etch/deposition rates were measured and the flux of C{sub x}F{sub y} species leaving the surface for various conditions were qualitatively determined. The following were observed: (1) c-C{sub 4}F{sub 8} is an etchant with Ar{sup +} bombardment; (2) the CF, CF{sub 2}, and CF{sub 3} species flux cannot account for the observed mass increase during depositing conditions; (3) CF{sub 2} and CF{sub 3} species are net products during etching conditions; and (4) the flux of large C{sub x}F{sub y} species leaving the surface is smaller during etching conditions than for depositing conditions. These observations imply that large C{sub x}F{sub y} species play a significant role in the surface chemistry.
- OSTI ID:
- 20636791
- Journal Information:
- Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films, Journal Name: Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films Journal Issue: 6 Vol. 22; ISSN 0734-2101; ISSN JVTAD6
- Country of Publication:
- United States
- Language:
- English
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