Etching characteristics of high-k dielectric HfO{sub 2} thin films in inductively coupled fluorocarbon plasmas
Journal Article
·
· Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films
- Department of Aeronautics and Astronautics, Kyoto University, Yoshida-Honmachi, Sakyo-ku, Kyoto 606-8501 (Japan)
Inductively coupled fluorocarbon (CF{sub 4}/Ar and C{sub 4}F{sub 8}/Ar) plasmas were used to etch HfO{sub 2}, which is a promising high-dielectric-constant material for the gate of complementary metal-oxide-semiconductor devices. The etch rates of HfO{sub 2} in CF{sub 4}/Ar plasmas exceeded those in C{sub 4}F{sub 8}/Ar plasmas. The tendency for etch rates to become higher in fluorine-rich (high F/C ratio) conditions indicates that HfO{sub 2} can be chemically etched by fluorine-containing species. In C{sub 4}F{sub 8}/Ar plasmas with a high Ar dilution ratio, the etch rate of HfO{sub 2} increased with increasing bias power. The etch rate of Si, however, decreased with bias power, suggesting that the deposition of carbon-containing species increased with increasing the power and inhibited the etching of Si. The HfO{sub 2}/Si selectivity monotonically increased with increasing power, then became more than 5 at the highest tested bias power. The carbon-containing species to inhibit etching of Si play an important role in enhancing the HfO{sub 2}/Si selectivity in C{sub 4}F{sub 8}/Ar plasmas.
- OSTI ID:
- 20723214
- Journal Information:
- Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films, Journal Name: Journal of Vacuum Science and Technology. A, Vacuum, Surfaces and Films Journal Issue: 6 Vol. 23; ISSN 0734-2101; ISSN JVTAD6
- Country of Publication:
- United States
- Language:
- English
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