Room-temperature ferromagneticlike behavior in Mn-implanted and postannealed InAs layers deposited by molecular beam epitaxy

Journal Article · Wed Apr 01 04:00:00 EDT 2009 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.3087477· OSTI ID:21190119

Gonzalez-Arrabal, R; Gonzalez, Y; Gonzalez, L; Martin-Gonzalez, M S ^[1]; Garcia-Hernandez, M ^[2]; Munnik, F ^[3]

---

1. Instituto de Microelectronica de Madrid CSIC C/Isaac Newton, 8. Tres Cantos, E-28760 Madrid (Spain)
2. Instituto de Ciencia de Materiales de Madrid (CSIC), Cantoblanco, E-28049 Madrid (Spain)
3. Institute of Ion Beam Physics and Materials Research, Forschungszentrum Dresden-Rossendorf, P.O. Box 510119, D-01314 Dresden (Germany)

We report on the magnetic and structural properties of Ar- and Mn-implanted InAs epitaxial films grown on GaAs (100) by molecular beam epitaxy and the effect of rapid thermal annealing (RTA) for 30 s at 750 deg. C. Channeling particle induced x-ray emission (PIXE) experiments reveal that after Mn implantation almost all Mn atoms are substitutional in the In site of the InAs lattice, like in a diluted magnetic semiconductor. All of these samples show diamagnetic behavior. However, after RTA treatment the Mn-InAs films exhibit room-temperature magnetism. According to PIXE measurements the Mn atoms are no longer substitutional. When the same set of experiments was performed with Ar as implantation ion, all of the layers present diamagnetism without exception. This indicates that the appearance of room-temperature ferromagneticlike behavior in the Mn-InAs-RTA layer is not related to lattice disorder produced during implantation but to a Mn reaction produced after a short thermal treatment. X-ray diffraction patterns and Rutherford backscattering measurements evidence the segregation of an oxygen-deficient MnO{sub 2} phase (nominally MnO{sub 1.94}) in the Mn-InAs-RTA epitaxial layers which might be the origin of the room-temperature ferromagneticlike response observed.

• OSTI ID: 21190119
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 7 Vol. 105; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
ARGON COMPOUNDS
CHANNELING
CRYSTAL GROWTH
DIAMAGNETISM
FERROMAGNETIC MATERIALS
GALLIUM ARSENIDES
INDIUM ARSENIDES
ION IMPLANTATION
LAYERS
MAGNETIC SEMICONDUCTORS
MAGNETIC SUSCEPTIBILITY
MANGANESE OXIDES
MOLECULAR BEAM EPITAXY
OXYGEN
PIXE ANALYSIS
RUTHERFORD BACKSCATTERING SPECTROSCOPY
SEGREGATION
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0273-0400 K
TEMPERATURE RANGE 1000-4000 K
THIN FILMS
TIME DEPENDENCE
X-RAY DIFFRACTION