Synthesis of dilute magnetic semiconductors by ion implantation. [CdMnTe synthesis]
We have synthesized layers of CdMnTe by implantation of Mn into CdTe. Samples of CdTe have been implanted with Mn ions of 60 keV energy to fluences in the range 1 x 10/sup 13/ cm/sup -2/ to 2 x 10/sup 16/ cm/sup -2/ resulting in local concentrations of up to 10% at the maximum of the Mn distribution. Rutherford backscattering-channeling analysis has been used to study the radiation damage after implantation and after subsequent rapid thermal annealing (RTA). These experiments reveal that RTA for 15 sec at a temperature T greater than or equal to 700/sup 0/C results in the complete recovery of the lattice order, without affecting the stoichiometry of CdTe. Photoluminescence (PL) measurements of a sample showing complete annealing reveal an increase in the band gap corresponding to the synthesis of very dilute (x approx. = 0.004) Cd/sub 1-x/Mn/sub x/Te. A shift of the excitonic PL peak to lower energies is observed when a magnetic field H less than or equal to 1T is applied. These measurements provide clear evidence for the synthesis of a DMS by ion implantation of Mn into CdTe.
- Research Organization:
- Massachusetts Inst. of Tech., Cambridge (USA); Oak Ridge National Lab., TN (USA)
- DOE Contract Number:
- AC05-84OR21400
- OSTI ID:
- 5659946
- Report Number(s):
- CONF-8606101-3; ON: DE86013263
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360605* -- Materials-- Radiation Effects
ANNEALING
BACKSCATTERING
BEAMS
CADMIUM COMPOUNDS
CADMIUM TELLURIDES
CHALCOGENIDES
CHARGED PARTICLES
ELASTIC SCATTERING
ELECTRONIC STRUCTURE
ENERGY RANGE
HEAT TREATMENTS
ION BEAMS
ION IMPLANTATION
IONS
KEV RANGE
KEV RANGE 10-100
LUMINESCENCE
MANGANESE COMPOUNDS
MANGANESE IONS
MANGANESE TELLURIDES
PHOTOLUMINESCENCE
PHYSICAL RADIATION EFFECTS
PRODUCTION
RADIATION EFFECTS
RUTHERFORD SCATTERING
SCATTERING
TELLURIDES
TELLURIUM COMPOUNDS
TRANSITION ELEMENT COMPOUNDS