Surface and interface reactions of sputtered TiNi/Si thin films

Journal Article · Sun Mar 15 00:00:00 EDT 2009 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.3082126· OSTI ID:21190087

Kumar, A K. Nanda; Jayakumar, S; Kannan, M D ^[1]; Rajagopalan, S; Balamurugan, A K; Tyagi, A K ^[2]; Kumar, Sanjeev; Reddy, G L. N.; Ramana, J V; Raju, V S ^[3]

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1. Department of Physics, PSG College of Technology, Coimbatore - 641012 (India)
2. Surface Science Section, MSD, IGCAR, Kalpakkam - 603102 (India)
3. Centre for Compositional Characterisation of Materials, Hyderabad - 500062 (India)

We present the surface and interfacial chemical analysis of sputter deposited TiNi thin films over Si (100) substrates using Rutherford backscattering spectrometry (RBS), secondary ionization mass spectrometry (SIMS), and grazing incidence x-ray diffraction analysis. Upon annealing to high temperatures, significant diffusion of Ni into the Si substrate was observed. The analysis of the RBS and SIMS spectra confirm the net movement of the film species into the substrate. Further, we discuss the formation mechanism and the composition distribution surrounding the TiNi/Si interface that proves conducive for the nucleation and growth of the detected nickel silicide compound.

• OSTI ID: 21190087
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 6 Vol. 105; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
CRYSTAL GROWTH
ION MICROPROBE ANALYSIS
IONIZATION
MASS SPECTRA
MASS SPECTROSCOPY
NICKEL ALLOYS
NICKEL SILICIDES
NUCLEATION
RUTHERFORD BACKSCATTERING SPECTROSCOPY
SEMICONDUCTOR MATERIALS
SILICON
SPUTTERING
SUBSTRATES
SURFACE COATING
THIN FILMS
TITANIUM ALLOYS
X-RAY DIFFRACTION