Structure of platinum silicide on silicon: advances in growth under high vacuum and interface analysis by Rutherford ion scattering and channeling
This work reports the growth of thin films of platinum silicide (PtSi) on single crystal silicon (Si) substrates and analysis of the interfacial structure by Rutherford Backscattering Spectrometry (RBS) and channeling. The films are performed by the electron beam evaporation of 10-100 Angstrom thick platinum layers onto silicon and thermal reaction of the diffusion couple. A technique was demonstrated to clean the silicon surface, deposit the platinum, and anneal the layer under a continuous high vacuum of <5 x 10/sup -8/ Torr. The efficacy of the cleaning is demonstrated by in-situ Auger spectroscopy. To anneal samples in vacuum, a Rapid Thermal Annealer based on exposure to incoherent light was designed and implemented. The RBS technique is specialized for the diagnosis of interfaces. Finally, the detection of 3-5 ..mu..m photons is reviewed, using the internal photoemission of hot carriers from the silicide into p-type Si. The relation between the interfacial structure produced by the processing techniques and the efficiency of practical detectors is discussed.
- Research Organization:
- Stanford Univ., CA (USA)
- OSTI ID:
- 6482869
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360601* -- Other Materials-- Preparation & Manufacture
42 ENGINEERING
420800 -- Engineering-- Electronic Circuits & Devices-- (-1989)
BEAMS
CHANNELING
CHEMICAL ANALYSIS
COATINGS
ELECTRON BEAMS
ELEMENTS
ENERGY BEAM DEPOSITION FILMS
FILMS
INTERFACES
ION CHANNELING
ION SCATTERING ANALYSIS
LEPTON BEAMS
NONDESTRUCTIVE ANALYSIS
PARTICLE BEAMS
PLATINUM COMPOUNDS
PLATINUM SILICIDES
SEMIMETALS
SILICIDES
SILICON
SILICON COMPOUNDS
SUBSTRATES
THIN FILMS
TRANSITION ELEMENT COMPOUNDS