Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

Structure of platinum silicide on silicon: advances in growth under high vacuum and interface analysis by Rutherford ion scattering and channeling

Thesis/Dissertation ·
OSTI ID:6482869

This work reports the growth of thin films of platinum silicide (PtSi) on single crystal silicon (Si) substrates and analysis of the interfacial structure by Rutherford Backscattering Spectrometry (RBS) and channeling. The films are performed by the electron beam evaporation of 10-100 Angstrom thick platinum layers onto silicon and thermal reaction of the diffusion couple. A technique was demonstrated to clean the silicon surface, deposit the platinum, and anneal the layer under a continuous high vacuum of <5 x 10/sup -8/ Torr. The efficacy of the cleaning is demonstrated by in-situ Auger spectroscopy. To anneal samples in vacuum, a Rapid Thermal Annealer based on exposure to incoherent light was designed and implemented. The RBS technique is specialized for the diagnosis of interfaces. Finally, the detection of 3-5 ..mu..m photons is reviewed, using the internal photoemission of hot carriers from the silicide into p-type Si. The relation between the interfacial structure produced by the processing techniques and the efficiency of practical detectors is discussed.

Research Organization:
Stanford Univ., CA (USA)
OSTI ID:
6482869
Country of Publication:
United States
Language:
English