In adlayer mediated molecular beam epitaxial growth and properties of a-plane InN on freestanding GaN

Journal Article · Mon Mar 02 04:00:00 EST 2009 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3092482· OSTI ID:21176010

Koblmueller, G; Wu, F; Gallinat, C S; Speck, J S ^[1]; Metcalfe, G D; Wraback, M ^[2]

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1. Materials Department, University of California, Santa Barbara, California 93106 (United States)
2. Sensors and Electron Devices Directorate, U.S. Army Research Laboratory, Maryland 20783 (United States)

The role of the In adlayer on the morphological and structural properties of nonpolar a-plane InN films was elucidated during the plasma-assisted molecular beam epitaxy on freestanding GaN. Reflection high energy electron diffraction during In adsorption experiments on a-plane InN surfaces revealed a stable In adlayer coverage of {approx}2 ML. This In adlayer-mediated growth was responsible for achieving atomically smooth surfaces (rms roughness of <1 nm), phase-pure material with lower x-ray rocking curve widths ({delta}{omega}<0.5 deg.), lower crystal mosaic tilt/twist, and decreased stacking fault densities, compared to N-rich conditions. The photoluminescence peak emission and band gap energy of the a-plane InN films were {approx}0.63 and {approx}0.7 eV, respectively.

• OSTI ID: 21176010
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 9 Vol. 94; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ADSORPTION
CRYSTAL GROWTH
CRYSTALS
ELECTRON DIFFRACTION
ENERGY GAP
GALLIUM NITRIDES
INDIUM NITRIDES
LAYERS
MOLECULAR BEAM EPITAXY
PHOTOLUMINESCENCE
PLASMA
REFLECTION
ROUGHNESS
SEMICONDUCTOR MATERIALS
STACKING FAULTS
THIN FILMS
X-RAY DIFFRACTION