Molecular beam epitaxy and structural anisotropy of m-plane InN grown on free-standing GaN
- Materials Department, University of California, Santa Barbara, California 93106-5050 (United States)
- U. S. Army Research Laboratory, Sensors and Electron Devices Directorate, 2800 Powder Mill Road, Adelphi, Maryland 20783 (United States)
This study reports on the growth of high-quality nonpolar m-plane [1100] InN films on free-standing m-plane GaN substrates by plasma-assisted molecular beam epitaxy. Optimized growth conditions (In/N ratio {approx}1 and T=390-430 deg. C) yielded very smooth InN films with undulated features elongated along the [1120] orientation. This directionality is associated with the underlying defect structure shown by the anisotropy of x-ray rocking curve widths parallel to the [1120] (i.e., 0.24 deg. - 0.34 deg.) and [0001] (i.e., 1.2 deg. - 2.7 deg.) orientations. Williamson-Hall analysis and transmission electron microscopy identified the mosaic tilt and lateral coherence length and their associations with different densities of dislocations and basal-plane stacking faults. Ultimately, very low band gap energies of {approx}0.67 eV were measured by optical absorption similar to the best c-plane InN.
- OSTI ID:
- 21175691
- Journal Information:
- Applied Physics Letters, Vol. 93, Issue 17; Other Information: DOI: 10.1063/1.3001806; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
ABSORPTION
ANISOTROPY
COHERENCE LENGTH
CRYSTAL GROWTH
CRYSTALS
DISLOCATIONS
FILMS
GALLIUM NITRIDES
GRAIN ORIENTATION
INDIUM NITRIDES
MOLECULAR BEAM EPITAXY
SEMICONDUCTOR MATERIALS
STACKING FAULTS
SUBSTRATES
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0400-1000 K
TRANSMISSION ELECTRON MICROSCOPY
X-RAY DIFFRACTION