Interfacial reactions and resistive switching behaviors of metal/NiO/metal structures
- Department of Physics and Astronomy, ReCOE and FPRD, Seoul National University, Seoul 151-747 (Korea, Republic of)
- Department of Electrophysics, Kwangwoon University, Seoul 139-701 (Korea, Republic of)
- Division of Nano Sciences and Department of Physics, Ewha Womans University, Seoul 120-750 (Korea, Republic of)
Ag/NiO/Pt structures did (did not) exhibit reproducible resistive switching when a positive bias was applied to the Pt (Ag) electrode. X-ray photoemission spectra revealed that ultrathin NiO films on Pt (Ag) layers did (did not) undergo reversible chemical state change during heat treatment in a vacuum and oxygen ambient. Such differences in interfacial chemical interaction may affect filament formation and rupture processes near the electrode and hence alter the resistive switching behaviors.
- OSTI ID:
- 21175874
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 2 Vol. 94; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
Similar Records
Resistance switching properties of planner Ag/Li:NiO/Ag structures induced by swift heavy ion irradiation
Reproducible resistance switching in polycrystalline NiO films
Effects of anode materials on resistive characteristics of NiO thin films
Journal Article
·
Wed Apr 01 00:00:00 EDT 2009
· Journal of Applied Physics
·
OSTI ID:21190117
Reproducible resistance switching in polycrystalline NiO films
Journal Article
·
Sun Dec 05 23:00:00 EST 2004
· Applied Physics Letters
·
OSTI ID:20634497
Effects of anode materials on resistive characteristics of NiO thin films
Journal Article
·
Sun Jan 27 23:00:00 EST 2013
· Applied Physics Letters
·
OSTI ID:22162699