Resistance switching properties of planner Ag/Li:NiO/Ag structures induced by swift heavy ion irradiation
- Department of Physics, School of Sciences, Gujarat University, Ahmedabad 380 009 (India)
- Department of Instruments and Control Engineering, Vishwakarma Government Engineering College, Chandkheda, Gandhinagar 382 424 (India)
- Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110 067 (India)
We report on the resistance switching induced by swift heavy ion (SHI) irradiation in lithium doped nanostructured NiO thin films grown on MgO (100) substrates by chemical solution deposition. Hysteresis in current-voltage curves were observed for the Ag/Li:NiO/Ag planner structures irradiated with 100 MeV Ag{sup +14} ions, whereas pristine samples showed only linear I-V characteristics. No preferential oxygen loss from the film surface has been detected in on-line elastic recoil detection analysis. This suggests that change in the defect density created by SHI irradiation that may contribute to the metallic filaments play a major role as compared to the interfacial oxygen vacancies in resistance switching of NiO.
- OSTI ID:
- 21190117
- Journal Information:
- Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 7 Vol. 105; ISSN JAPIAU; ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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