Effects of anode materials on resistive characteristics of NiO thin films

Journal Article · Sun Jan 27 23:00:00 EST 2013 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4789523· OSTI ID:22162699

Jia, Ze ^[1]; Wang, Linkai; Zhang, Naiwen; Ren, Tianling ^[2]; Liou, Juin J. ^[3]

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1. School of Microelectronics and Solid-State Electronics, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054 (China)
2. Institute of Microelectronics, Tsinghua National Laboratory for Information Science and Technology, Tsinghua University, Beijing 100084 (China)
3. Department of Electrical Engineering and Computer Science, University of Central Florida, Orlando, Florida 32816 (United States)

This letter shows that the NiO-based structure with different anodes has different resistive switching properties. A conical conductive filament (CF) model is proposed for oxygen vacancies distributed in NiO films. Modeling analysis reveals much larger dissolution velocity of CF near anodes than near cathodes during the reset process. Different interfaces shown in Auger electron spectroscopy can be bound with the model to reveal that CF is dissolved in the structure with Pt or Au as anodes, while CF remains constant if the anode material is Ti or Al, which can explain whether switching properties occur in the specific NiO-based structures.

• OSTI ID: 22162699
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 4 Vol. 102; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM
ANODES
AUGER ELECTRON SPECTROSCOPY
CATHODES
CRYSTALS
DISSOLUTION
ELECTRIC CONDUCTIVITY
FILAMENTS
INTERFACES
MATERIALS
NICKEL OXIDES
OXYGEN
SIMULATION
THIN FILMS
TITANIUM
VACANCIES