Transformation mechanisms from metallic Zn nanocrystals to insulating ZnSiO{sub 3} nanocrystals in a SiO{sub 2} matrix due to thermal treatment
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Daejeon 305-701 (Korea, Republic of)
- Advanced Semiconductor Research Center, Electronics and Computer Engineering, Hanyang University, 17 Haengdang-dong, Seongdong-gu, Seoul 133-791 (Korea, Republic of)
- Thin Film Materials Research Center, Korea Institute of Science and Technology, Seoul 136-791 (Korea, Republic of)
Transmission electron microscopy (TEM), high-resolution TEM, and x-ray energy dispersive spectroscopy results showed that Zn metallic nanocrystals and ZnSiO{sub 3} insulating nanocrytals embedded in a SiO{sub 2} matrix were created from the ZnO thin films deposited on n-Si (001) substrates due to rapid thermal annealing. The formed Zn metallic nanocrystals were transformed into monoclinic ZnSiO{sub 3} insulating nanocrystals with increasing number of Zn atoms resulting from an increase in the annealing time up to 10 min. The transformation mechanisms from metallic Zn nanocrystals to insulating ZnSiO{sub 3} nanocrystals in a SiO{sub 2} matrix due to rapid thermal annealing are described on the basis of the experimental results.
- OSTI ID:
- 21175795
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 22 Vol. 93; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
Similar Records
Electron-beam-induced formation of Zn nanocrystal islands in a SiO{sub 2} layer
Ion beam synthesis of CdS, ZnS, and PbS compound semiconductor nanocrystals