Electron-beam-induced formation of Zn nanocrystal islands in a SiO{sub 2} layer
- Advanced Semiconductor Research Center, Division of Electronics and Computer Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of)
Electron-beam-induced Zn nanocrystal islands were formed in a dielectric SiO{sub 2} layer. When a ZnO thin film on a p-type Si with amorphous SiO{sub x} interface layer is subjected to a 900 deg. C annealing followed by electron irradiation in a transmission electron microscope environment, an amorphous Zn{sub 2x}Si{sub 1-x}O{sub 2} layer is formed. Upon irradiation with a 300 keV electrons, metallic and single crystal nanoislands of Zn with {approx}7-10 nm diameter were formed and embedded within the SiO{sub 2} interface layer. Possible mechanisms for the formation of Zn nanocrystals are presented.
- OSTI ID:
- 20971801
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 5 Vol. 90; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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