Experimental determination of valence band offset at PbTe/CdTe(111) heterojunction interface by x-ray photoelectron spectroscopy

Journal Article · Mon Nov 17 04:00:00 EST 2008 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3028028· OSTI ID:21175762

Jianxiao, Si; Shuqiang, Jin; Hanjie, Zhang; Ping, Zhu; Dongjiang, Qiu; Huizhen, Wu ^[1]

---

1. Department of Physics, Zhejiang University Hangzhou, Zhejiang 310027 (China)

Lattice-matched PbTe/CdTe(111) heterojunction interfaces were studied using x-ray photoelectron spectroscopy. A type-I band alignment with a valence band offset of {delta}E{sub V}=0.135{+-}0.05 eV and a conduction band offset of {delta}E{sub C}=1.145{+-}0.05 eV is concluded. Within experimental error the determined valence band offset is in agreement with theoretical prediction by inclusion of spin-orbit interaction.

• OSTI ID: 21175762
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 20 Vol. 93; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CADMIUM TELLURIDES
HETEROJUNCTIONS
L-S COUPLING
LEAD TELLURIDES
SEMICONDUCTOR MATERIALS
VALENCE
X-RAY PHOTOELECTRON SPECTROSCOPY