Molecular beam epitaxial growth of InAsN:Sb for midinfrared Optoelectronics

Journal Article · Mon Sep 22 04:00:00 EDT 2008 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2988281· OSTI ID:21175604

Zhuang, Q; Godenir, A; Krier, A ^[1]; Tsai, G; Lin, H H ^[2]

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1. Physics Department, Lancaster University, Lancaster LA1 4YB (United Kingdom)
2. Department of Electrical Engineering, National Taiwan University, Taipei 106, Taiwan (China)

We report molecular beam epitaxial growth and characterization of dilute nitride InAsN:Sb. X-ray diffraction, energy dispersive x-ray spectrometry, and electron probe microanalysis revealed that nitrogen incorporation is significantly enhanced by introduction of Sb flux during growth, together with a dramatic improvement of the photoluminescence. These observations were attributed to the surfactant effect of Sb which suppresses the surface diffusion length of nitrogen and improves the homogeneity of the alloy. Sb incorporation is enhanced with the presence of nitrogen which was associated with the surface kinetic of growth. InAsN:Sb/InAs p-i-n light emitting diodes operating near 4.0 {mu}m were also realized.

• OSTI ID: 21175604
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 12 Vol. 93; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANTIMONY
CRYSTAL GROWTH
DIFFUSION LENGTH
ELECTRON MICROPROBE ANALYSIS
ELECTRON PROBES
INDIUM ARSENIDES
INDIUM NITRIDES
INTERMETALLIC COMPOUNDS
LIGHT EMITTING DIODES
MOLECULAR BEAM EPITAXY
NITROGEN
PHOTOLUMINESCENCE
SEMICONDUCTOR MATERIALS
X-RAY DIFFRACTION
X-RAY SPECTROSCOPY