Mid-infrared luminescence of an InNAsSb/InAs single quantum well grown by molecular beam epitaxy

Journal Article · Mon Sep 18 04:00:00 EDT 2006 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2356102· OSTI ID:20861121

Yuen, Homan B; Kim, Seongsin M; Hatami, Fariba; Harris, James S; Chin, Alan H ^[1]

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1. Solid State and Photonics Laboratory, Department of Electrical Engineering, Stanford University, Stanford, California 94305-4075 (United States)

The authors report the growth and characterization of a dilute nitride, InNAsSb/InAs, by solid source molecular beam epitaxy. Optimizing growth conditions for nitrogen incorporation has resulted in high-quality InNAsSb epilayers without any structural degradation, as confirmed by high-resolution x-ray diffraction. Optical properties were investigated by temperature dependent and excitation power dependent photoluminescence. The authors obtained mid-infrared luminescence around 4 {mu}m at low temperature, which reveals strong carrier localization behavior at low temperature, induced by nitrogen and antimony interaction. The band alignment of InNAsSb/InAs can be type I instead of the conventional type II found for InAsSb/InAs. A conduction band offset, E{sub c}, of {approx}102 meV was obtained.

• OSTI ID: 20861121
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 12 Vol. 89; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANTIMONY
CRYSTAL GROWTH
EXCITATION
INDIUM ANTIMONIDES
INDIUM ARSENIDES
LAYERS
MOLECULAR BEAM EPITAXY
NITRIDES
NITROGEN
OPTICAL PROPERTIES
PHOTOLUMINESCENCE
QUANTUM WELLS
SEMICONDUCTOR MATERIALS
TEMPERATURE DEPENDENCE
X-RAY DIFFRACTION