Detailed arsenic concentration profiles at Si/SiO{sub 2} interfaces

Journal Article · Fri Aug 15 00:00:00 EDT 2008 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.2967713· OSTI ID:21137445

Lirong, Pei ^[1]; Duscher, Gerd ^[1]; Steen, Christian ^[2]; Pichler, Peter; Ryssel, Heiner ^[2]; Napolitani, Enrico; De Salvador, Davide ^[3]; Piro, Alberto Maria; Terrasi, Antonio ^[4]; Severac, Fabrice; Cristiano, Filadelfo ^[5]; Ravichandran, Karthik; Gupta, Naveen; Windl, Wolfgang ^[6]

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1. Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695-7916 (United States)
2. Chair of Electron Devices, University of Erlangen-Nuremberg, Cauerstrasse 6, 91058 Erlangen (Germany)
3. MATIS-CNR-INFM and Dipartimento di Fisica, Universita di Padova, via Marzolo 8, 35141 Padova (Italy)
4. MATIS-CNR-INFM and Dipartimento di Fisica e Astronomia, Universita di Catania, Via S. Sofia 64, 95127 Catania (Italy)
5. LAAS/CNRS, University of Toulouse, 7 avenue du Colonel Roche, 31077 Toulouse (France)
6. Department of Materials Science and Engineering, The Ohio State University, 2041 College Road, Columbus, Ohio 43210-1178 (United States)

The pile-up of arsenic at the Si/SiO{sub 2} interface after As implantation and annealing was investigated by high resolution Z-contrast imaging, electron energy-loss spectroscopy (EELS), grazing incidence x-ray fluorescence spectroscopy (GI-XRF), secondary ion mass spectrometry, x-ray photoelectron spectroscopy, Rutherford backscattering spectrometry, as well as Hall mobility and four-point probe resistivity measurements. After properly taking into account their respective artifacts, the results of all methods are compatible with each other, with EELS and GI-XRF combined with etching providing similar spatial resolution on the nanometer scale for the dopant profile. The sheet concentration of the piled-up As at the interface was found to be {approx}1x10{sup 15} cm{sup -2} for an implanted dose of 1x10{sup 16} cm{sup -2} with a maximum concentration of {approx}10 at. %. The strain observed in the Z-contrast images also suggests a significant concentration of local distortions within 3 nm from the interface, which, however, do not seem to involve intrinsic point defects.

• OSTI ID: 21137445
• Journal Information: Journal of Applied Physics, Vol. 104, Issue 4; Other Information: DOI: 10.1063/1.2967713; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
ARSENIC
ELECTRIC CONDUCTIVITY
ENERGY-LOSS SPECTROSCOPY
ETCHING
ION IMPLANTATION
MASS SPECTRA
MASS SPECTROSCOPY
POINT DEFECTS
RUTHERFORD BACKSCATTERING SPECTROSCOPY
SEMICONDUCTOR MATERIALS
SILICON
SILICON OXIDES
SPATIAL RESOLUTION
X-RAY FLUORESCENCE ANALYSIS
X-RAY PHOTOELECTRON SPECTROSCOPY