skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Detailed arsenic concentration profiles at Si/SiO{sub 2} interfaces

Abstract

The pile-up of arsenic at the Si/SiO{sub 2} interface after As implantation and annealing was investigated by high resolution Z-contrast imaging, electron energy-loss spectroscopy (EELS), grazing incidence x-ray fluorescence spectroscopy (GI-XRF), secondary ion mass spectrometry, x-ray photoelectron spectroscopy, Rutherford backscattering spectrometry, as well as Hall mobility and four-point probe resistivity measurements. After properly taking into account their respective artifacts, the results of all methods are compatible with each other, with EELS and GI-XRF combined with etching providing similar spatial resolution on the nanometer scale for the dopant profile. The sheet concentration of the piled-up As at the interface was found to be {approx}1x10{sup 15} cm{sup -2} for an implanted dose of 1x10{sup 16} cm{sup -2} with a maximum concentration of {approx}10 at. %. The strain observed in the Z-contrast images also suggests a significant concentration of local distortions within 3 nm from the interface, which, however, do not seem to involve intrinsic point defects.

Authors:
 [1];  [1];  [2]; ;  [2]; ;  [3]; ;  [4]; ;  [5]; ; ;  [6]
  1. Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695-7916 (United States)
  2. Chair of Electron Devices, University of Erlangen-Nuremberg, Cauerstrasse 6, 91058 Erlangen (Germany)
  3. MATIS-CNR-INFM and Dipartimento di Fisica, Universita di Padova, via Marzolo 8, 35141 Padova (Italy)
  4. MATIS-CNR-INFM and Dipartimento di Fisica e Astronomia, Universita di Catania, Via S. Sofia 64, 95127 Catania (Italy)
  5. LAAS/CNRS, University of Toulouse, 7 avenue du Colonel Roche, 31077 Toulouse (France)
  6. Department of Materials Science and Engineering, The Ohio State University, 2041 College Road, Columbus, Ohio 43210-1178 (United States)
Publication Date:
OSTI Identifier:
21137445
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 104; Journal Issue: 4; Other Information: DOI: 10.1063/1.2967713; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ANNEALING; ARSENIC; ELECTRIC CONDUCTIVITY; ENERGY-LOSS SPECTROSCOPY; ETCHING; ION IMPLANTATION; MASS SPECTRA; MASS SPECTROSCOPY; POINT DEFECTS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTOR MATERIALS; SILICON; SILICON OXIDES; SPATIAL RESOLUTION; X-RAY FLUORESCENCE ANALYSIS; X-RAY PHOTOELECTRON SPECTROSCOPY

Citation Formats

Lirong, Pei, Duscher, Gerd, Condensed Matter Sciences Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, Steen, Christian, Pichler, Peter, Ryssel, Heiner, Fraunhofer Institute of Integrated Systems and Device Technology, Schottkystrasse 10, 91058 Erlangen, Napolitani, Enrico, De Salvador, Davide, Piro, Alberto Maria, Terrasi, Antonio, Severac, Fabrice, Cristiano, Filadelfo, Ravichandran, Karthik, Gupta, Naveen, and Windl, Wolfgang. Detailed arsenic concentration profiles at Si/SiO{sub 2} interfaces. United States: N. p., 2008. Web. doi:10.1063/1.2967713.
Lirong, Pei, Duscher, Gerd, Condensed Matter Sciences Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, Steen, Christian, Pichler, Peter, Ryssel, Heiner, Fraunhofer Institute of Integrated Systems and Device Technology, Schottkystrasse 10, 91058 Erlangen, Napolitani, Enrico, De Salvador, Davide, Piro, Alberto Maria, Terrasi, Antonio, Severac, Fabrice, Cristiano, Filadelfo, Ravichandran, Karthik, Gupta, Naveen, & Windl, Wolfgang. Detailed arsenic concentration profiles at Si/SiO{sub 2} interfaces. United States. https://doi.org/10.1063/1.2967713
Lirong, Pei, Duscher, Gerd, Condensed Matter Sciences Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, Steen, Christian, Pichler, Peter, Ryssel, Heiner, Fraunhofer Institute of Integrated Systems and Device Technology, Schottkystrasse 10, 91058 Erlangen, Napolitani, Enrico, De Salvador, Davide, Piro, Alberto Maria, Terrasi, Antonio, Severac, Fabrice, Cristiano, Filadelfo, Ravichandran, Karthik, Gupta, Naveen, and Windl, Wolfgang. 2008. "Detailed arsenic concentration profiles at Si/SiO{sub 2} interfaces". United States. https://doi.org/10.1063/1.2967713.
@article{osti_21137445,
title = {Detailed arsenic concentration profiles at Si/SiO{sub 2} interfaces},
author = {Lirong, Pei and Duscher, Gerd and Condensed Matter Sciences Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 and Steen, Christian and Pichler, Peter and Ryssel, Heiner and Fraunhofer Institute of Integrated Systems and Device Technology, Schottkystrasse 10, 91058 Erlangen and Napolitani, Enrico and De Salvador, Davide and Piro, Alberto Maria and Terrasi, Antonio and Severac, Fabrice and Cristiano, Filadelfo and Ravichandran, Karthik and Gupta, Naveen and Windl, Wolfgang},
abstractNote = {The pile-up of arsenic at the Si/SiO{sub 2} interface after As implantation and annealing was investigated by high resolution Z-contrast imaging, electron energy-loss spectroscopy (EELS), grazing incidence x-ray fluorescence spectroscopy (GI-XRF), secondary ion mass spectrometry, x-ray photoelectron spectroscopy, Rutherford backscattering spectrometry, as well as Hall mobility and four-point probe resistivity measurements. After properly taking into account their respective artifacts, the results of all methods are compatible with each other, with EELS and GI-XRF combined with etching providing similar spatial resolution on the nanometer scale for the dopant profile. The sheet concentration of the piled-up As at the interface was found to be {approx}1x10{sup 15} cm{sup -2} for an implanted dose of 1x10{sup 16} cm{sup -2} with a maximum concentration of {approx}10 at. %. The strain observed in the Z-contrast images also suggests a significant concentration of local distortions within 3 nm from the interface, which, however, do not seem to involve intrinsic point defects.},
doi = {10.1063/1.2967713},
url = {https://www.osti.gov/biblio/21137445}, journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 4,
volume = 104,
place = {United States},
year = {Fri Aug 15 00:00:00 EDT 2008},
month = {Fri Aug 15 00:00:00 EDT 2008}
}