Detailed arsenic concentration profiles at Si/SiO[sub 2] interfaces

Journal Article · Tue Jan 01 04:00:00 EST 2008 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.2967713· OSTI ID:1052281

Pei, Lirong; Duscher, Gerd; Steen, Christian; Pichler, Peter; Ryssel, Heiner; Napolitani, Enrico; De Salvador, Davide; Piro, Alberto Maria; Terrasi, Antonio; Severac, Fabrice; Cristiano, Filadelfo; Ravichandran, Karthik; Gupta, Naveen; Windl, Wolfgang

The pile-up of arsenic at the Si/SiO2 interface after As implantation and annealing was investigated by high resolution Z-contrast imaging, electron energy-loss spectroscopy EELS, grazing incidence x-ray fluorescence spectroscopy GI-XRF, secondary ion mass spectrometry, x-ray photoelectron spectroscopy, Rutherford backscattering spectrometry, as well as Hall mobility and four-point probe resistivity measurements. After properly taking into account their respective artifacts, the results of all methods are compatible with each other, with EELS and GI-XRF combined with etching providing similar spatial resolution on the nanometer scale for the dopant profile. The sheet concentration of the piled-up As at the interface was found to be 11015 cm 2 for an implanted dose of 11016 cm 2 with a maximum concentration of 10 at. %. The strain observed in the Z-contrast images also suggests a significant concentration of local distortions within 3 nm from the interface, which, however, do not seem to involve intrinsic point defects. 2008 American Institute of Physics.

• Research Organization: Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
• Sponsoring Organization: USDOE Office of Science (SC)
• DOE Contract Number: AC05-00OR22725
• OSTI ID: 1052281
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 4 Vol. 104; ISSN JAPIAU; ISSN 0021-8979
• Publisher: American Institute of Physics (AIP)
• Country of Publication: United States
• Language: English