Detailed arsenic concentration profiles at Si/SiO2 interfaces

Journal Article · Tue Jan 01 04:00:00 EST 2008 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.2967713· OSTI ID:1050931

Pei, Lirong ^[1]; Duscher, G. ^[2]; Steen, Christian ^[3]; Pichler, Peter ^[4]; Ryssel, Heiner ^[5]; Napolitani, Enrico ^[6]; De Salvador, Davide ^[6]; Piro, Alberto ^[7]; Terrasi, Antonio ^[7]

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1. ORNL
2. University of Tennessee, Knoxville (UTK) & Oak Ridge National Laboratory (ORNL)
3. Chair of Electron Devices, University of Erlangen-Nuremberg, Cauerstrasse 6, 91058 Erlangen,
4. Fraunhofer-Institute, Freiburg, Germany
5. Fraunhofer Institute of Integrated Systems and Device Technology, Schottkystrasse 10, 91058 Erlangen
6. MATIS-CNR-INFM and Dipartimento di Fisica, Università di Padova, via Marzolo 8, 35141 Padova, Italy
7. MATIS-CNR-INFM and Dipartimento di Fisica e Astronomia, Universita di Catania, Via S. Sofia 64,

The pile-up of arsenic at the Si/SiO2 interface after As implantation and annealing was investigated by high resolution Z-contrast imaging, electron energy-loss spectroscopy EELS, grazing incidence x-ray fluorescence spectroscopy GI-XRF, secondary ion mass spectrometry, x-ray photoelectron spectroscopy, Rutherford backscattering spectrometry, as well as Hall mobility and four-point probe resistivity measurements. After properly taking into account their respective artifacts, the results of all methods are compatible with each other, with EELS and GI-XRF combined with etching providing similar spatial resolution on the nanometer scale for the dopant profile. The sheet concentration of the piled-up As at the interface was found to be 11015 cm 2 for an implanted dose of 11016 cm 2 with a maximum concentration of 10 at. %. The strain observed in the Z-contrast images also suggests a significant concentration of local distortions within 3 nm from the interface, which, however, do not seem to involve intrinsic point defects.

• Research Organization: Oak Ridge National Laboratory (ORNL)
• Sponsoring Organization: SC USDOE - Office of Science (SC)
• DOE Contract Number: AC05-00OR22725
• OSTI ID: 1050931
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 4 Vol. 104; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ANNEALING
ARSENIC
ELECTRONS
ENERGY-LOSS SPECTROSCOPY
ETCHING
FLUORESCENCE SPECTROSCOPY
MASS SPECTROSCOPY
POINT DEFECTS
PROBES
RESOLUTION
RUTHERFORD BACKSCATTERING SPECTROSCOPY
SPATIAL RESOLUTION
STRAINS
X-RAY PHOTOELECTRON SPECTROSCOPY