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Characterization of ZnO plasma in a radio frequency sputtering system

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.2948940· OSTI ID:21137356
;  [1];  [2]
  1. Optoelectronic Devices Laboratory, Department of Physics, Cochin University of Science and Technology, Kochi 682 022 (India)
  2. Department of Instrumentation, Cochin University of Science and Technology, Kochi 682 022 (India)
Plasma generated by the radio frequency (rf) magnetron sputtering of gallium doped zinc oxide (ZnO) has been studied using cylindrical Langmuir probe and optical emission spectroscopy. The electron density and electron temperature were calculated for various rf powers at different spatial positions along the propagation direction of the plume. The electron density was found to increase with argon gas pressure whereas electron temperature decreased. The focusing of the plasma due to the magnetic field of the magnetron was observed at 3 cm distance from the target at low rf powers, while shift in the focusing of the plume was observed for high sputtering powers. Plasma potential of the plume was also evaluated at all sputtering conditions and its spatial variations were studied. Optical emission spectra of the plume were recorded at various spatial positions of the plume to get qualitative estimate of species in the plasma at various sputtering conditions. ZnO thin films were deposited on glass substrates placed at 3 and 6 cm distances from the target at different sputtering conditions. X-ray diffraction and scanning electron microscopy studies were carried out to investigate the crystallographic properties and the surface morphology of films deposited at these distances in relation to the plasma parameters.
OSTI ID:
21137356
Journal Information:
Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 12 Vol. 103; ISSN JAPIAU; ISSN 0021-8979
Country of Publication:
United States
Language:
English

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