Spatial and temporal studies of laser ablated ZnO plasma

Journal Article · Mon Sep 01 00:00:00 EDT 2008 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.2975960· OSTI ID:21182595

Joshy, N V; Saji, K J; Jayaraj, M K ^[1]

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1. Optoelectronic Devices Laboratory, Department of Physics, Cochin University of Science and Technology, Kochi 682 022 (India)

Gallium doped zinc oxide was ablated using the third harmonics of Nd:YAG laser at various laser fluences and nitrous oxide ambient gas pressures. Optical emission spectroscopic technique was used to determine the plasma parameters. Spatial variation of electron number density (N{sub e}) was determined along the direction normal to the target surface. The electron density obtained was of the order of 10{sup 17} cm{sup -3}, for the laser fluence in the range of 1.27-6.35 J cm{sup -2}. The influence of the substrate temperature on the plasma plume was studied by keeping an Al{sub 2}O{sub 3} (alumina) substrate at a distance of 5 cm distance from the target at various temperatures. The increase in the substrate temperature enhanced the electron number density and intensity of spectral emissions of various species in the plume. The time of flight transients of specific emissions from the plume were recorded. The velocity of neutral gallium decreased from 6.45 to 3.87 km/s at 4 mm distance from the target when the ambient gas pressure was increased from 0.0001 to 0.1 mbar. The velocities of the species increased considerably with an increase in laser fluences. ZnO thin films were deposited on alumina substrates. The plasma plume kinematics were used to corroborate the nature of thin film deposition.

• OSTI ID: 21182595
• Journal Information: Journal of Applied Physics, Vol. 104, Issue 5; Other Information: DOI: 10.1063/1.2975960; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ABLATION
ALUMINIUM OXIDES
DISTANCE
DOPED MATERIALS
ELECTRON DENSITY
ENERGY BEAM DEPOSITION
GALLIUM
LASER RADIATION
NEODYMIUM LASERS
NITROUS OXIDE
PHOTOLUMINESCENCE
PLASMA
PLASMA PRODUCTION
PULSED IRRADIATION
SEMICONDUCTOR LASERS
SEMICONDUCTOR MATERIALS
SUBSTRATES
THIN FILMS
TIME-OF-FLIGHT METHOD
ZINC OXIDES