ZnO Thin Film Ga s Sensor for CO

Journal Article · Thu Mar 11 04:00:00 EST 2010 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.3377880· OSTI ID:21371696

Manap, Y A; Ismail, B; Yusuf, M N. M.; Shamsuri, W N. W.; Wahab, Y; Othaman, Z ^[1]

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1. Department of Physics, Faculty of Science, University of Technology Malaysia, Skudai, Johor (Malaysia)

ZnO thin films were deposited onto corning glass substrates by rf magnetron sputtering system using ZnO targets. Films were deposited under rf power of 80 W at various deposition time. The distance between the target and substrate was held at 45 cm. A mixed Ar and O{sub 2} gas was introduced into the chamber at 4x10{sup -2} Torr. The structure of the deposited ZnO films was investigated by Scanning electron miscroscopy. The gas sensing properties were evaluated at various operation temperatures by measuring the changes of resistance of the sensor in air and in CO gas respectively using the gas sensing characterization system. The grain size was increased as the film thickness was increased during deposition. The sensor with 233 nm film thickness exhibited the highest sensitivity for CO gas.

• OSTI ID: 21371696
• Journal Information: AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 1217; ISSN 0094-243X; ISSN APCPCS
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
AIR
CARBON COMPOUNDS
CARBON MONOXIDE
CARBON OXIDES
CHALCOGENIDES
DEPOSITION
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELECTRON MICROSCOPY
ELECTRON SCANNING
FILMS
FLUIDS
GASES
GLASS
GRAIN SIZE
MICROSCOPY
MICROSTRUCTURE
NANOSTRUCTURES
OXIDES
OXYGEN COMPOUNDS
PHYSICAL PROPERTIES
SCANNING ELECTRON MICROSCOPY
SENSITIVITY
SENSORS
SIZE
SPUTTERING
SUBSTRATES
THIN FILMS
ZINC COMPOUNDS
ZINC OXIDES