Characterization of plasma etching damage on p-type GaN using Schottky diodes

Journal Article · Thu May 01 04:00:00 EDT 2008 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.2908227· OSTI ID:21137244

Kato, M; Mikamo, K; Ichimura, M ^[1]; Kanechika, M; Ishiguro, O; Kachi, T ^[2]

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1. Department of Engineering Physics, Electronics and Mechanics, Nagoya Institute of Technology, Gokiso, Showa, Nagoya 466-8555 (Japan)
2. Toyota Central R and D Laboratories, Inc., Nagakute, Aichi, 480-1192 (Japan)

The plasma etching damage in p-type GaN has been characterized. From current-voltage and capacitance-voltage characteristics of Schottky diodes, it was revealed that inductively coupled plasma (ICP) etching causes an increase in series resistance of the Schottky diodes and compensation of acceptors in p-type GaN. We investigated deep levels near the valence band of p-type GaN using current deep level transient spectroscopy (DLTS), and no deep level originating from the ICP etching damage was observed. On the other hand, by capacitance DLTS measurements for n-type GaN, we observed an increase in concentration of a donor-type defect with an activation energy of 0.25 eV after the ICP etching. The origin of this defect would be due to nitrogen vacancies. We also observed this defect by photocapacitance measurements for ICP-etched p-type GaN. For both n- and p-type GaN, we found that the low bias power ICP etching is effective to reduce the concentration of this defect introduced by the high bias power ICP etching.

• OSTI ID: 21137244
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 9 Vol. 103; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ACTIVATION ENERGY
CAPACITANCE
DAMAGE
DEEP LEVEL TRANSIENT SPECTROSCOPY
ELECTRIC POTENTIAL
ETCHING
GALLIUM NITRIDES
IMPURITIES
NITROGEN
PLASMA
SCHOTTKY BARRIER DIODES
SEMICONDUCTOR MATERIALS
VACANCIES