Effects of reactive ion etching on the electrical properties of n-GaN surfaces
Book
·
OSTI ID:395032
- Univ. of Illinois, Urbana, IL (United States)
- APA Optics, Inc., Blaine, MN (United States)
Dry etch damage on n-GaN has been investigated using Pd Schottky diodes fabricated on surfaces etched by conventional reactive ion etching with SiCl{sub 4} plasma. The Schottky barrier height and ideality factor were investigated as a function of the plasma self-bias voltage. Current-voltage measurements revealed severe degradation of both the forward and reverse characteristics for plasma self-bias voltages in excess of {minus}150 V.
- OSTI ID:
- 395032
- Report Number(s):
- CONF-951155--; ISBN 1-55899-298-7
- Country of Publication:
- United States
- Language:
- English
Similar Records
Electron cyclotron resonance etching characteristics of GaN in plasmas with and without hydrogen
Schottky barrier heights of Ni, Pt, Pd, and Au on n-type GaN
Evolution of Ti Schottky barrier heights on n-type GaN with annealing
Book
·
Thu Oct 31 23:00:00 EST 1996
·
OSTI ID:395031
Schottky barrier heights of Ni, Pt, Pd, and Au on n-type GaN
Book
·
Thu Oct 31 23:00:00 EST 1996
·
OSTI ID:395039
Evolution of Ti Schottky barrier heights on n-type GaN with annealing
Book
·
Tue Dec 30 23:00:00 EST 1997
·
OSTI ID:585873