Mn behavior in Ge{sub 0.96}Mn{sub 0.04} magnetic thin films grown on Si

Journal Article · Sat Mar 15 00:00:00 EDT 2008 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.2875110· OSTI ID:21134011

Yong, Wang; Jin, Zou ^[1]; Zuoming, Zhao; Xinhai, Han; Xiaoyu, Zhou; Wang, Kang L ^[2]

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1. School of Engineering and Centre for Microscopy and Microanalysis, The University of Queensland, Brisbane QLD 4072 (Australia)
2. Device Research Lab, Electrical Engineering, University of California at Los Angeles, Los Angeles, California 90095 (United States)

Mn behaviors in the Ge{sub 0.96}Mn{sub 0.04} thin films grown on Si (001) substrates by molecular beam epitaxy were investigated by high resolution transmission electron microscopy, electron energy loss spectroscopy, and energy dispersive spectroscopy. Unlike the previously reported case of GeMn thin films grown on Ge, Mn has been found to be diffused toward to the surface during the thin film growth. When the Mn concentration is sufficiently high, Mn{sub 5}Ge{sub 3} clusters may be formed. Further annealing of the high Mn concentrated thin film promotes the formation of {alpha}-Mn metallic clusters. We believe that all these extraordinary phenomena are attributed to Si as the substrate.

• OSTI ID: 21134011
• Journal Information: Journal of Applied Physics, Vol. 103, Issue 6; Other Information: DOI: 10.1063/1.2875110; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
CRYSTAL GROWTH
ENERGY-LOSS SPECTROSCOPY
GERMANIUM COMPOUNDS
MAGNETIC SEMICONDUCTORS
MANGANESE COMPOUNDS
MANGANESE-ALPHA
MOLECULAR BEAM EPITAXY
SILICON
SUBSTRATES
THIN FILMS
TRANSMISSION ELECTRON MICROSCOPY