Transmission electron microscopy study of the oxidation of TiN layers during sputtering process
- Department of Electrical and Computer Engineering, Data Storage Systems Center, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213 (United States)
Epitaxial SrRuO{sub 3}/SrTiO{sub 3} (001) thin films with a TiN template layer have been deposited on Si(001) single crystal substrates by rf sputtering. The epitaxial orientation relationship was determined to be cube on cube with respect to Si and the crystal quality of the SrRuO{sub 3}/SrTiO{sub 3} film is preserved even when the TiN template layer was oxidized into anatase phase of TiO{sub 2} during the sputtering process of SrRuO{sub 3}. The effect of oxygen plasma on the oxidation and delamination of the TiN layer has been studied using transmission electron microscopy (TEM). The stress in the thin film of SrRuO{sub 3}/SrTiO{sub 3}/TiN structure was determined from the buckle shape in both plan view and cross-sectional TEM images. The critical stress and the compressive stress were estimated to be 2 and 4 GPa.
- OSTI ID:
- 21134002
- Journal Information:
- Journal of Applied Physics, Vol. 103, Issue 6; Other Information: DOI: 10.1063/1.2899180; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
Similar Records
Single-crystal Pb(Zr{sub x}Ti{sub 1{minus}x})O{sub 3} thin films prepared by metal-organic chemical vapor deposition: Systematic compositional variation of electronic and optical properties
Interface of epitaxial SrTiO{sub 3} on silicon characterized by transmission electron microscopy, electron energy loss spectroscopy, and electron holography