Epitaxial growth of SrTiO{sub 3} thin film on Si by laser molecular beam epitaxy

Journal Article · Sun Dec 31 23:00:00 EST 2006 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2430407· OSTI ID:20883254

Zhou, X Y; Miao, J; Dai, J Y; Chan, H L. W.; Choy, C L; Wang, Y; Li, Q ^[1]

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1. Department of Applied Physics, Hong Kong Polytechnic University, Hong Kong (China) and Materials Research Center, Hong Kong Polytechnic University, Hong Kong (China)

SrTiO{sub 3} thin films have been deposited on Si (001) wafers by laser molecular beam epitaxy using an ultrathin Sr layer as the template. X-ray diffraction measurements indicated that SrTiO{sub 3} was well crystallized and epitaxially aligned with Si. Cross-sectional observations in a transmission electron microscope revealed that the SrTiO{sub 3}/Si interface was sharp, smooth, and fully crystallized. The thickness of the Sr template was found to be a critical factor that influenced the quality of SrTiO{sub 3} and the interfacial structure. Electrical measurements revealed that the SrTiO{sub 3} film was highly resistive.

• OSTI ID: 20883254
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 1 Vol. 90; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CRYSTAL GROWTH
ELECTRIC CONDUCTIVITY
INTERFACES
LASER MATERIALS
LASERS
LAYERS
MOLECULAR BEAM EPITAXY
SEMICONDUCTOR MATERIALS
SILICON
STRONTIUM
STRONTIUM TITANATES
THIN FILMS
TRANSMISSION ELECTRON MICROSCOPY
X-RAY DIFFRACTION