Interfacial reaction in the growth of epitaxial SrTiO{sub 3} thin films on (001) Si substrates
Journal Article
·
· Journal of Applied Physics
- Institut fuer Festkoerperforschung, Forschungszentrum Juelich Gesellschaft mit Beschraenkter Haftung (GmbH), D-52425 Juelich (Germany)
The SrTiO{sub 3}/Si interface was investigated by transmission electron microscopy for SrTiO{sub 3} films grown on (001) Si by molecular-beam epitaxy with different native oxide (SiO{sub 2}) removal treatments, and Sr/Ti flux ratios. The interface and film microstructure were independent of the process used to remove the native oxide, but the interface reactivity was dependent on the Sr/Ti flux ratio. A low Sr/Ti flux ratio ({approx}0.8) resulted not only in a layer of amorphous material at the film/substrate interface but also in the formation of crystalline C49 TiSi{sub 2} precipitates at that interface. These results are consistent with thermodynamic expectations in which it is paramount to maintain separation between TiO{sub 2} and the underlying silicon.
- OSTI ID:
- 20709683
- Journal Information:
- Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 10 Vol. 97; ISSN JAPIAU; ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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