Growth and structural characterization of (0.2)Bi(Zn{sub 1/2}Ti{sub 1/2})O{sub 3}-(0.8)PbTiO{sub 3} epitaxial thin films by off-axis rf sputtering

Journal Article · Mon Jul 28 00:00:00 EDT 2008 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2965462· OSTI ID:21124009

Kwon, Daeyoung; Kim, Bongju; Tong, P; Kim, Bog G ^[1]

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1. Department of Physics and Research Center for Dielectric and Advanced Matter Physics, Pusan National University, Busan 609-735 (Korea, Republic of)

We report the epitaxial growth of ferroelectric (0.2)Bi(Zn{sub 1/2}Ti{sub 1/2})O{sub 3}-(0.8)PbTiO{sub 3} thin films. Despite its high c/a ratio, the off-axis rf magnetron sputtering yields the epitaxial growth of high-quality thin films on (001) SrTiO{sub 3} substrates. The structural development of the film with increasing film thickness has been examined by using the synchrotron x-ray diffraction and x-ray reflectivity. The experimental results can be explained in terms of the strain relaxation process associated with the misfit dislocations between the thin film and the substrate.

• OSTI ID: 21124009
• Journal Information: Applied Physics Letters, Vol. 93, Issue 4; Other Information: DOI: 10.1063/1.2965462; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
BISMUTH COMPOUNDS
CRYSTAL GROWTH
DISLOCATIONS
EPITAXY
FERROELECTRIC MATERIALS
LAYERS
LEAD COMPOUNDS
REFLECTIVITY
SPUTTERING
STRONTIUM TITANATES
SUBSTRATES
SURFACE COATING
SYNCHROTRONS
THIN FILMS
X-RAY DIFFRACTION
ZINC COMPOUNDS