Correlation of tellurium inclusions and carrier lifetime in detector grade cadmium zinc telluride

Journal Article · Mon Jul 28 00:00:00 EDT 2008 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2967726· OSTI ID:21124006

Elshazly, Ezzat S; Tepper, Gary ^[1]

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1. Department of Mechanical Engineering, Virginia Commonwealth University, Richmond, Virginia 23284 (United States)

Carrier lifetimes and tellurium inclusion densities in detector grade cadmium zinc telluride crystals grown by the high pressure Bridgman method were optically measured using pulsed laser microwave cavity perturbation and infrared microscopy. Excess carriers were produced in the material using a pulsed laser with a wavelength of 1064 nm and pulse width of 7 ns, and the electronic decay was measured at room temperature. Spatial mapping of lifetimes and defect densities in cadmium zinc telluride was performed to determine the relationship between tellurium defect density and trapping. A strong correlation was found between the volume fraction of tellurium inclusions and the carrier trapping time.

• OSTI ID: 21124006
• Journal Information: Applied Physics Letters, Vol. 93, Issue 4; Other Information: DOI: 10.1063/1.2967726; (c) 2008 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
BRIDGMAN METHOD
CADMIUM COMPOUNDS
CARRIER LIFETIME
CRYSTAL DEFECTS
CRYSTAL GROWTH
INCLUSIONS
LASERS
MICROSCOPY
MICROWAVE RADIATION
PULSES
SEMICONDUCTOR DETECTORS
SEMICONDUCTOR MATERIALS
TELLURIUM
TEMPERATURE RANGE 0273-0400 K
TRAPPING
ZINC TELLURIDES