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Title: Inclusion free cadmium zinc tellurium and cadmium tellurium crystals and associated growth method

Abstract

The present disclosure provides systems and methods for crystal growth of cadmium zinc tellurium (CZT) and cadmium tellurium (CdTe) crystals with an inverted growth reactor chamber. The inverted growth reactor chamber enables growth of single, large, high purity CZT and CdTe crystals that can be used, for example, in X-ray and gamma detection, substrates for infrared detectors, or the like. The inverted growth reactor chamber enables reductions in the presence of Te inclusions, which are recognized as an important limiting factor in using CZT or CdTe as radiation detectors. The inverted growth reactor chamber can be utilized with existing crystal growth techniques such as the Bridgman crystal growth mechanism and the like. In an exemplary embodiment, the inverted growth reactor chamber is a U-shaped ampoule.

Inventors:
 [1];  [2]
  1. South Setauket, NY
  2. Ridge, NY
Publication Date:
Research Org.:
Brookhaven National Lab. (BNL), Upton, NY (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
993079
Patent Number(s):
7,758,843
Application Number:
12/416,224
Assignee:
U.S. Department of Energy (Washington, DC)
DOE Contract Number:  
AC02-98CH10886
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
47 OTHER INSTRUMENTATION

Citation Formats

Bolotnikov, Aleskey E, and James, Ralph B. Inclusion free cadmium zinc tellurium and cadmium tellurium crystals and associated growth method. United States: N. p., 2010. Web.
Bolotnikov, Aleskey E, & James, Ralph B. Inclusion free cadmium zinc tellurium and cadmium tellurium crystals and associated growth method. United States.
Bolotnikov, Aleskey E, and James, Ralph B. Tue . "Inclusion free cadmium zinc tellurium and cadmium tellurium crystals and associated growth method". United States. https://www.osti.gov/servlets/purl/993079.
@article{osti_993079,
title = {Inclusion free cadmium zinc tellurium and cadmium tellurium crystals and associated growth method},
author = {Bolotnikov, Aleskey E and James, Ralph B},
abstractNote = {The present disclosure provides systems and methods for crystal growth of cadmium zinc tellurium (CZT) and cadmium tellurium (CdTe) crystals with an inverted growth reactor chamber. The inverted growth reactor chamber enables growth of single, large, high purity CZT and CdTe crystals that can be used, for example, in X-ray and gamma detection, substrates for infrared detectors, or the like. The inverted growth reactor chamber enables reductions in the presence of Te inclusions, which are recognized as an important limiting factor in using CZT or CdTe as radiation detectors. The inverted growth reactor chamber can be utilized with existing crystal growth techniques such as the Bridgman crystal growth mechanism and the like. In an exemplary embodiment, the inverted growth reactor chamber is a U-shaped ampoule.},
doi = {},
url = {https://www.osti.gov/biblio/993079}, journal = {},
number = ,
volume = ,
place = {United States},
year = {2010},
month = {7}
}

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Works referenced in this record:

Purification of Cd0.9Zn0.1Te by physical vapor transport method
journal, December 2005


Thermophysical properties of liquid Te: Density, electrical conductivity, and viscosity
journal, April 2005


Crystal growth of large-diameter bulk CdTe on GaAs wafer seed plates
journal, April 2008


Light-Induced Tellurium Enrichment on CdZnTe Crystal Surfaces Detected by Raman Spectroscopy
journal, April 2008


Effect of Te precipitates on the performance of CdZnTe detectors
journal, April 2006


Analysis of CZT crystals and detectors grown in russia and the ukraine by high-pressure bridgman methods
journal, June 1999


Vapor Growth of Cadmium Telluride Single Crystals
journal, March 1962


Improved growth of PbI2 single crystals
journal, March 2007