Inclusion free cadmium zinc tellurium and cadmium tellurium crystals and associated growth method

Bolotnikov, Aleskey E; James, Ralph B

Inclusion free cadmium zinc tellurium and cadmium tellurium crystals and associated growth method

Patent · Tue Jul 20 04:00:00 EDT 2010

OSTI ID:993079

Bolotnikov, Aleskey E ^[1]; James, Ralph B ^[2]

South Setauket, NY
Ridge, NY

The present disclosure provides systems and methods for crystal growth of cadmium zinc tellurium (CZT) and cadmium tellurium (CdTe) crystals with an inverted growth reactor chamber. The inverted growth reactor chamber enables growth of single, large, high purity CZT and CdTe crystals that can be used, for example, in X-ray and gamma detection, substrates for infrared detectors, or the like. The inverted growth reactor chamber enables reductions in the presence of Te inclusions, which are recognized as an important limiting factor in using CZT or CdTe as radiation detectors. The inverted growth reactor chamber can be utilized with existing crystal growth techniques such as the Bridgman crystal growth mechanism and the like. In an exemplary embodiment, the inverted growth reactor chamber is a U-shaped ampoule.

Research Organization:: Brookhaven National Laboratory (BNL), Upton, NY (United States)

Sponsoring Organization:: USDOE

DOE Contract Number:: AC02-98CH10886

Assignee:: U.S. Department of Energy (Washington, DC)

Patent Number(s):: 7,758,843

Application Number:: 12/416,224

OSTI ID:: 993079

Country of Publication:: United States

Language:: English

References (9)

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