X-ray diagnostics of P-HEMT AlGaAs/InGaAs/GaAs structures
Journal Article
·
· Crystallography Reports
- Russian Academy of Sciences, Institute of Physics and Technology (Russian Federation)
- Russian Academy of Sciences, Shubnikov Institute of Crystallography (Russian Federation)
- Russian Academy of Sciences, Institute of Ultrahigh-Frequency Semiconductor Electronics (Russian Federation)
- Academy of Sciences of the Czech Republic, Institute of Radio Engineering and Electronics (Czech Republic)
The structural characteristics of the P-HEMT AlGaAs/InGaAs/GaAs heterostructure have been studied by high-resolution X-ray diffractometry. The parameters of the heterostructure layers were determined by simultaneous analysis of the X-ray reflection curves for the (004) and (113) crystallographic planes. Interface diffusion has been established for the In{sub y}Ga{sub 1-y}As quantum well and the Al{sub x}Ga{sub 1-x}As spacer layer, which are characterized by reconstructed profiles of the lattice parameter distribution and anisotropic distribution of random displacements in the layer plane and in the perpendicular direction.
- OSTI ID:
- 21090889
- Journal Information:
- Crystallography Reports, Vol. 52, Issue 4; Other Information: DOI: 10.1134/S1063774507040074; Copyright (c) 2007 Nauka/Interperiodica; Article Copyright (c) 2007 Pleiades Publishing, Inc; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7745
- Country of Publication:
- United States
- Language:
- English
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